Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	220W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	220W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3V
Max Collector Current	60A
Reverse Recovery Time	60 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	45 ns
Test Condition	300V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 20A
Turn Off Time-Nom (toff)	160 ns
IGBT Type	PT
Gate Charge	38nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	16ns/42ns
Switching Energy	270μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
50	$3.89820	$194.91

IXGA30N60C3D4

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