IXGH120N30B3

new-10%

Manufacturer part number:IXGH120N30B3

Manufacturer:IXYS

Description:IGBT 300V 75A 540W TO247

Case Package:SOT-23

Datasheet:IXGH120N30B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	540W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*120N30
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	540W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	300V
Max Collector Current	75A
Collector Emitter Breakdown Voltage	300V
Collector Emitter Saturation Voltage	1.42V
Turn On Time	41 ns
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 120A
Turn Off Time-Nom (toff)	356 ns
IGBT Type	PT
Gate Charge	225nC
Current - Collector Pulsed (Icm)	480A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant