IXGH20N100

new-10%

Manufacturer part number:IXGH20N100

Manufacturer:IXYS

Description:IGBT 1000V 40A 150W TO247

Case Package:SOT-23

Datasheet:IXGH20N100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*20N100
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Rise Time-Max	200ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	150W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1kV
Max Collector Current	40A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1kV
Voltage - Collector Emitter Breakdown (Max)	1000V
Turn On Time	30 ns
Test Condition	800V, 20A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 20A
Turn Off Time-Nom (toff)	700 ns
IGBT Type	PT
Gate Charge	73nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	30ns/350ns
Switching Energy	3.5mJ (off)
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	2000ns
RoHS Status	ROHS3 Compliant