NGTB15N60S1EG

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Manufacturer part number:NGTB15N60S1EG

Manufacturer:ON Semiconductor

Description:NGTB15N60S1EG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB15N60S1EG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Lifecycle Status	ACTIVE (Last Updated: 15 hours ago)
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	117W
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	47W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	65 ns
Power - Max	117W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	170 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	30A
Reverse Recovery Time	270 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	93 ns
Test Condition	400V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 15A
Turn Off Time-Nom (toff)	440 ns
IGBT Type	NPT
Gate Charge	88nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	65ns/170ns
Switching Energy	550μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	15.75mm
Length	10.28mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free