IXGH25N120A

new-10%

Manufacturer part number:IXGH25N120A

Manufacturer:IXYS

Description:IGBT 1200V 50A 200W TO247AD

Case Package:SOT-23

Datasheet:IXGH25N120A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	50A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	350 ns
Test Condition	960V, 25A, 33 Ω, 15V
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 25A
Turn Off Time-Nom (toff)	1520 ns
Gate Charge	130nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	100ns/650ns
Switching Energy	11mJ (off)
Gate-Emitter Voltage-Max	20V
VCEsat-Max	4 V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	ROHS3 Compliant