IXGH28N60B3D1

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Manufacturer part number:IXGH28N60B3D1

Manufacturer:IXYS

Description:IGBT 600V 66A 190W TO247AD

Case Package:SOT-23

Datasheet:IXGH28N60B3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	PolarHV™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation	190W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*28N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	190W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	66A
Reverse Recovery Time	25 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Turn On Time	45 ns
Test Condition	400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 24A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
Gate Charge	62nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	19ns/125ns
Switching Energy	340μJ (on), 650μJ (off)
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free