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STGWT20H65FB

  • STGWT20H65FB
  • STGWT20H65FB

STGWT20H65FB

STGWT20H65FB

STMicroelectronics

STGWT20H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWT20H65FB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 32 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.756003g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 168W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGWT20
Element Configuration Single
Input Type Standard
Power - Max 168W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.55V
Test Condition 400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
IGBT Type Trench Field Stop
Gate Charge 120nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 30ns/139ns
Switching Energy 77μJ (on), 170μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.98000 $3.98
30 $3.37833 $101.3499
120 $2.92792 $351.3504
510 $2.49249 $1271.1699
1,020 $2.10210 $2.1021
2,520 $2.00200 $4.004
STGWT20H65FB Product Details

STGWT20H65FB Description


This IGBT was created employing a cutting-edge, exclusive trench gate field-stop construction. The component is a new HB series IGBT, which offers the best conduction and switching loss trade-off for any frequency converter's efficiency. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operation.



STGWT20H65FB Features


  • TJ = 175 °C is the maximum junction temperature.

  • succession of fast switching

  • reduce the tail current

  • IC = 20 A, VCE(sat) = 1.55 V (typ. ),

  • distribution of tight parameters

  • Paralleling safely

  • a minimal heat resistance



STGWT20H65FB Applications


Switching applications


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