STGWT20H65FB Description

This IGBT was created employing a cutting-edge, exclusive trench gate field-stop construction. The component is a new HB series IGBT, which offers the best conduction and switching loss trade-off for any frequency converter's efficiency. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operation.

STGWT20H65FB Features

• TJ = 175 °C is the maximum junction temperature.

• succession of fast switching

• reduce the tail current

• IC = 20 A, VCE(sat) = 1.55 V (typ. ),

• distribution of tight parameters

• Paralleling safely

• a minimal heat resistance

STGWT20H65FB Applications

Switching applications