IXGH40N120B2D1

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Manufacturer part number:IXGH40N120B2D1

Manufacturer:IXYS

Description:IGBT 1200V 75A 380W TO247

Case Package:SOT-23

Datasheet:IXGH40N120B2D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	380W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*40N120
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	380W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	75A
Reverse Recovery Time	100ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.9V
Turn On Time	79 ns
Test Condition	960V, 40A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 40A
Turn Off Time-Nom (toff)	770 ns
IGBT Type	PT
Gate Charge	138nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	21ns/290ns
Switching Energy	4.5mJ (on), 3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	270ns
Height	21.46mm
Length	16.26mm
Width	5.3mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free