IXGH48N60C3

new-10%

Manufacturer part number:IXGH48N60C3

Manufacturer:IXYS

Description:IGBT 600V 75A 300W TO247AD

Case Package:SOT-23

Datasheet:IXGH48N60C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Base Part Number	IXG*48N60
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	300W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.3V
Input Capacitance	1.96nF
Turn On Time	45 ns
Test Condition	400V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A
Turn Off Time-Nom (toff)	187 ns
IGBT Type	PT
Gate Charge	77nC
Current - Collector Pulsed (Icm)	250A
Td (on/off) @ 25°C	19ns/60ns
Switching Energy	410μJ (on), 230μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free