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IRGP4790D-EPBF

IRGP4790D-EPBF

IRGP4790D-EPBF

Infineon Technologies

IRGP4790D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4790D-EPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 455W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 455W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 140A
Reverse Recovery Time 170 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.7V
Test Condition 400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
Gate Charge 210nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 50ns/200ns
Switching Energy 2.5mJ (on), 2.2mJ (off)
REACH SVHC No SVHC
RoHS Status RoHS Compliant
IRGP4790D-EPBF Product Details

IRGP4790D-EPBF               Description

 

 

The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.

 


IRGP4790D-EPBF               Applications


·  Industrial Motor Drive

·  UPS

·  Solar Inverters

·  Welding


IRGP4790D-EPBF               Features


 LowVCEION)and Switching Losses

 5.5us Short Circuit SOA

 Square RBSOA

 Maximum Junction Temperature175C

 PositiveVCE(ON)Temperature Coefficient

 Lead-Free.RoHs compliant



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