IRGP4790D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGP4790D-EPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
455W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
455W
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
140A
Reverse Recovery Time
170 ns
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.7V
Test Condition
400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 75A
Gate Charge
210nC
Current - Collector Pulsed (Icm)
225A
Td (on/off) @ 25°C
50ns/200ns
Switching Energy
2.5mJ (on), 2.2mJ (off)
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
IRGP4790D-EPBF Product Details
IRGP4790D-EPBF Description
The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.