IRG4BC20U-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC20U-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
60W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
16A
Test Condition
480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 9A
Gate Charge
27nC
Current - Collector Pulsed (Icm)
52A
Td (on/off) @ 25°C
21ns/86ns
Switching Energy
100μJ (on), 120μJ (off)
RoHS Status
Non-RoHS Compliant
IRG4BC20U-S Product Details
IRG4BC20U-S Description
A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.