IXGK320N60A3

new-10%

Manufacturer part number:IXGK320N60A3

Manufacturer:IXYS

Description:IGBT 600V 320A 1000W TO264AA

Case Package:SOT-23

Datasheet:IXGK320N60A3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Weight	10.000011g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1kW
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	1kW
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	63 ns
Power - Max	1000W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	290 ns
Collector Emitter Voltage (VCEO)	1.25V
Max Collector Current	320A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.05V
Turn On Time	139 ns
Vce(on) (Max) @ Vge, Ic	1.25V @ 15V, 100A
Turn Off Time-Nom (toff)	1870 ns
IGBT Type	PT
Gate Charge	560nC
Current - Collector Pulsed (Icm)	700A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free