FGPF50N30TTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGPF50N30TTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Max Power Dissipation
46.8W
Number of Elements
1
Element Configuration
Single
Case Connection
ISOLATED
Input Type
Standard
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
300V
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
300V
Turn On Time
108 ns
Vce(on) (Max) @ Vge, Ic
1.5V @ 15V, 15A
Turn Off Time-Nom (toff)
423 ns
IGBT Type
Trench
Gate Charge
97nC
Current - Collector Pulsed (Icm)
120A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.832747
$1.832747
10
$1.729007
$17.29007
100
$1.631139
$163.1139
500
$1.538810
$769.405
1000
$1.451708
$1451.708
FGPF50N30TTU Product Details
FGPF50N30TTU Description
FGPF50N30TTU transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGPF50N30TTU
MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor FGPF50N30TTU has the common source configuration.