AFGB30T65SQDN

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Manufacturer part number:AFGB30T65SQDN

Manufacturer:ON Semiconductor

Description:AFGB30T65SQDN datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:AFGB30T65SQDN Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, EcoSPARK®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1
Terminal Finish	Tin (Sn)
Reach Compliance Code	not_compliant
Power - Max	220W
Reverse Recovery Time	245ns
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	60A
Test Condition	400V, 30A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A
Gate Charge	56nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	14.5ns/63.2ns

Quantity	Unit Price	Ext. Price
800	$2.56620	$2052.96

Description

The AFGB30T65SQDN is a 650 V, 30 A, D2PAK IGBT for Automotive Applications. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. A metal-oxide-semiconductor (MOS) gate arrangement controls four alternating layers (P–N–P–N).