STGW30NC60KD

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Manufacturer part number:STGW30NC60KD

Manufacturer:STMicroelectronics

Description:STGW30NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW30NC60KD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	ULTRA FAST
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Base Part Number	STGW30
Pin Count	3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	29 ns
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	120 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	40 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	41 ns
Test Condition	480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 20A
Turn Off Time-Nom (toff)	290 ns
Gate Charge	96nC
Current - Collector Pulsed (Icm)	125A
Td (on/off) @ 25°C	29ns/120ns
Switching Energy	350μJ (on), 435μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free