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STGP6NC60HD

STGP6NC60HD

STGP6NC60HD

STMicroelectronics

STGP6NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGP6NC60HD Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 56W
Current Rating 15A
Base Part Number STGP6
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 56W
Input Type Standard
Turn On Delay Time 12 ns
Transistor Application POWER CONTROL
Rise Time 5ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 76 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 15A
Reverse Recovery Time 21 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Turn On Time 17.3 ns
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 3A
Turn Off Time-Nom (toff) 222 ns
Gate Charge 13.6nC
Current - Collector Pulsed (Icm) 21A
Td (on/off) @ 25°C 12ns/76ns
Switching Energy 20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 9.15mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.772560 $2.77256
10 $2.615623 $26.15623
100 $2.467569 $246.7569
500 $2.327895 $1163.9475
1000 $2.196127 $2196.127
STGP6NC60HD Product Details

STGP6NC60HD Description


STGP6NC60HD is an N-Channel IGBT that employs the most recent high-voltage technology and is based on a unique strip arrangement. STMicroelectronics has produced an innovative family of IGBTs, the PowerMESHTM IGBTs, that exhibit exceptional performance. The suffix "H" denotes a family specialized for high-frequency applications, with very high switching capabilities (reduced tfall) and low voltage drop.


STGP6NC60HD Features

Low VCE(sat)
Low CRES/CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
High-frequency operation



STGP6NC60HD Applications

High-frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers

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