IXBH6N170

new-10%

Manufacturer part number:IXBH6N170

Manufacturer:IXYS

Description:IGBT 1700V 12A 75W TO247AD

Case Package:SOT-23

Datasheet:IXBH6N170 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	BIMOSFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	75W
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	75W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	12A
Reverse Recovery Time	1.08 μs
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Collector Emitter Saturation Voltage	2.3V
Turn On Time	104 ns
Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 6A
Turn Off Time-Nom (toff)	700 ns
Gate Charge	17nC
Current - Collector Pulsed (Icm)	36A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free