IXGP30N60C3C1

new-10%

Manufacturer part number:IXGP30N60C3C1

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXGP30N60C3C1IGBT Single Transistor, SIC, 60 A, 3 V, 220 W, 600 V, TO-220AB, 3 Pins

Case Package:SOT-23

Datasheet:IXGP30N60C3C1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	PURE TIN
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	220W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*30N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	220W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3V
Max Collector Current	60A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	3V
Turn On Time	37 ns
Test Condition	300V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 20A
Turn Off Time-Nom (toff)	160 ns
IGBT Type	PT
Gate Charge	38nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	17ns/42ns
Switching Energy	120μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant