IRGP4266DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGP4266DPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2007
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
455W
Rise Time-Max
90ns
Element Configuration
Single
Input Type
Standard
Power - Max
455W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
140A
Reverse Recovery Time
170 ns
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.7V
Test Condition
400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 75A
Gate Charge
210nC
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
50ns/200ns
Switching Energy
2.5mJ (on), 2.2mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7.7V
Fall Time-Max (tf)
80ns
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.872609
$8.872609
10
$8.370386
$83.70386
100
$7.896590
$789.659
500
$7.449613
$3724.8065
1000
$7.027937
$7027.937
IRGP4266DPBF Product Details
IRGP4266DPBF Description
IRGP4266DPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its 5.5μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications.