IXGQ20N120BD1

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Manufacturer part number:IXGQ20N120BD1

Manufacturer:IXYS

Description:IGBT 1200V 40A 190W TO3P

Case Package:SOT-23

Datasheet:IXGQ20N120BD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	5.500006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	PURE TIN
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	190W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*20N120
Pin Count	2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	190W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	40A
Reverse Recovery Time	40 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	43 ns
Test Condition	960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 20A
Turn Off Time-Nom (toff)	630 ns
Gate Charge	62nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	20ns/270ns
Switching Energy	2.1mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant