IXGQ35N120BD1

new-10%

Manufacturer part number:IXGQ35N120BD1

Manufacturer:IXYS

Description:IGBT 1200V 75A 400W TO3P

Case Package:SOT-23

Datasheet:IXGQ35N120BD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	5.500006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Max Power Dissipation	400W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*35N120
Pin Count	2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	400W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	75A
Reverse Recovery Time	40 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	105 ns
Test Condition	960V, 35A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.3V @ 15V, 35A
Turn Off Time-Nom (toff)	780 ns
Gate Charge	140nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	40ns/270ns
Switching Energy	900μJ (on), 3.8mJ (off)
RoHS Status	ROHS3 Compliant