IXGR50N60BD1

new-10%

Manufacturer part number:IXGR50N60BD1

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) ISOPLUS 247

Case Package:SOT-23

Datasheet:IXGR50N60BD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFAST™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*50N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Power - Max	250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Reverse Recovery Time	35 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	110 ns
Test Condition	480V, 50A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 50A
Turn Off Time-Nom (toff)	375 ns
Gate Charge	110nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	50ns/110ns
Switching Energy	3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant