IXGR60N60B2D1

new-10%

Manufacturer part number:IXGR60N60B2D1

Manufacturer:IXYS

Description:IGBT 600V 75A 250W ISOPLUS247

Case Package:SOT-23

Datasheet:IXGR60N60B2D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFAST™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation	250W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*60N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	250W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	100ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Reverse Recovery Time	35 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2V
Turn On Time	64 ns
Test Condition	400V, 50A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 50A
Turn Off Time-Nom (toff)	550 ns
IGBT Type	PT
Gate Charge	170nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	28ns/160ns
Switching Energy	1mJ (off)
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free