SIGC156T60NR2CX1SA4 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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SIGC156T60NR2CX1SA4 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Published
2016
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
S-XUUC-N11
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Dual Supply Voltage
600V
Current - Collector (Ic) (Max)
200A
Turn On Time
229 ns
Test Condition
300V, 200A, 1.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 200A
Turn Off Time-Nom (toff)
326 ns
IGBT Type
NPT
Current - Collector Pulsed (Icm)
600A
Td (on/off) @ 25°C
180ns/285ns
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
SIGC156T60NR2CX1SA4 Product Details
SIGC156T60NR2CX1SA4 Description
SIGC156T60NR2CX1SA4 is a 600v IGBT Chip in NPT technology. The Infineon SIGC156T60NR2CX1SA4 can be applied in drives due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor SIGC156T60NR2CX1SA4 is in the sawn-on foil package with ±20V Gate-emitter voltage. The SIGC156T60NR2CX1SA4 is used for IGBT-Modules.