IRG4BH20K-LPBF

new-10%

IRG4BH20K-LPBF

Manufacturer part number:IRG4BH20K-LPBF

Manufacturer:Infineon Technologies

Description:IRG4BH20K-LPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BH20K-LPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Weight	2.084002g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	ULTRA FAST, LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	60W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Current Rating	11A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Element Configuration	Dual
Power Dissipation	60W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	23 ns
Transistor Application	POWER CONTROL
Rise Time	26ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	93 ns
Collector Emitter Voltage (VCEO)	4.3V
Max Collector Current	11A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.17V
Turn On Time	51 ns
Test Condition	960V, 5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	4.3V @ 15V, 5A
Turn Off Time-Nom (toff)	720 ns
Gate Charge	28nC
Current - Collector Pulsed (Icm)	22A
Td (on/off) @ 25°C	23ns/93ns
Switching Energy	450μJ (on), 440μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	400ns
Height	9.65mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Contains Lead, Lead Free