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IRG4IBC20FD

IRG4IBC20FD

IRG4IBC20FD

Infineon Technologies

IRG4IBC20FD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4IBC20FD Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature ULTRA FAST SOFT RECOVERY
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection ISOLATED
Input Type Standard
Power - Max 34W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 37ns
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 14.3A
Turn On Time 63 ns
Test Condition 480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Turn Off Time-Nom (toff) 610 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 43ns/240ns
Switching Energy 250μJ (on), 640μJ (off)
RoHS Status Non-RoHS Compliant
IRG4IBC20FD Product Details

IRG4IBC20FD  Benefits

Simplified assembly

Highest efficiency and power density

HEXFREDTM antiparallel Diode minimizes

switching losses and EMI



IRG4IBC20FD  Features

Very Low 1.66V voltage drop

2.5kV, 60s insulation voltage⑤

4.8 mm creepage distance to the heatsink

Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

IGBT co-packaged with HEXFREDTM ultrafast,

ultrasoft recovery antiparallel diodes

Tighter parameter distribution

Industry-standard Isolated TO-220 FullpakTM

outline




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