IXGT30N120B3D1

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IXGT30N120B3D1

Manufacturer part number:IXGT30N120B3D1

Manufacturer:IXYS

Description:Trans IGBT Chip 1.2KV 50A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXGT30N120B3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	PURE TIN
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*30N120
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	50A
Reverse Recovery Time	100 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.5V
Turn On Time	56 ns
Test Condition	960V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 30A
Turn Off Time-Nom (toff)	471 ns
IGBT Type	PT
Gate Charge	87nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	16ns/127ns
Switching Energy	3.47mJ (on), 2.16mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	5.1mm
Length	16.05mm
Width	14mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free