IXGT30N60B2D1

new-10%

Manufacturer part number:IXGT30N60B2D1

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 600V 70A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXGT30N60B2D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFAST™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Max Power Dissipation	190W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*30N60
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	190W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	70A
Reverse Recovery Time	25 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	30 ns
Test Condition	400V, 24A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 24A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
Gate Charge	66nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	13ns/110ns
Switching Energy	320μJ (off)
RoHS Status	RoHS Compliant