IRG4BC30U-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4BC30U-SPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1998
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
100W
Current Rating
23A
Base Part Number
IRG4BC30U-SPBF
Element Configuration
Single
Power Dissipation
100W
Input Type
Standard
Power - Max
100W
Rise Time
9.6ns
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
23A
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
23A
Collector Emitter Saturation Voltage
1.95V
Test Condition
480V, 12A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 12A
Gate Charge
50nC
Current - Collector Pulsed (Icm)
92A
Td (on/off) @ 25°C
17ns/78ns
Switching Energy
160μJ (on), 200μJ (off)
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.077360
$0.07736
500
$0.056882
$28.441
1000
$0.047402
$47.402
2000
$0.043488
$86.976
5000
$0.040643
$203.215
10000
$0.037807
$378.07
15000
$0.036564
$548.46
50000
$0.035953
$1797.65
IRG4BC30U-SPBF Product Details
IRG4BC30U-SPBF Description
IRG4BC30U-SPBF emerges as an insulated gate bipolar transistor provided by Infineon Technologies. It is a generation 4 IGBT providing tighter parameter distribution and higher efficiency than generation 3. IRG4BC30U-SPBF is optimized for high operating frequencies (8-40 kHz in hard switching) and for specified application conditions. It is available in the industry standard D2Pak package for the purpose of saving board space.