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SGR20N40LTM

SGR20N40LTM

SGR20N40LTM

ON Semiconductor

SGR20N40LTM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGR20N40LTM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 400V
Max Power Dissipation 45W
Current Rating 150A
Element Configuration Single
Power Dissipation 45W
Input Type Standard
Collector Emitter Voltage (VCEO) 400V
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 4.5V
Vce(on) (Max) @ Vge, Ic 8V @ 4.5V, 150A
IGBT Type Trench
RoHS Status RoHS Compliant
Lead Free Lead Free
SGR20N40LTM Product Details

SGR20N40LTM Description


Compared to transistors with a planar gate structure, Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure offer better conduction and switching performance. They are also highly noise-resistant. These gadgets work great for strobe applications.



SGR20N40LTM Features


  • Large input resistance

  • High maximum current capacity (150A)

  • Easy gate operation



SGR20N40LTM Applications


Bright flash.


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