IRG4BC40W-LPBF

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Manufacturer part number:IRG4BC40W-LPBF

Manufacturer:Infineon Technologies

Description:IRG4BC40W-LPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC40W-LPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Weight	2.084002g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e3
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	160W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Current Rating	40A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Element Configuration	Dual
Power Dissipation	160W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	22ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	40A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.36V
Turn On Time	48 ns
Test Condition	480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Turn Off Time-Nom (toff)	294 ns
Gate Charge	98nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	27ns/100ns
Switching Energy	110μJ (on), 230μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	110ns
Height	9.652mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free