Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
Series	HiPerFAST™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	660W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	200A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*120N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	660W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	60 ns
Transistor Application	POWER CONTROL
Rise Time	45ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	200 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	200A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	120 ns
Test Condition	480V, 100A, 2.4 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 120A
Turn Off Time-Nom (toff)	540 ns
IGBT Type	PT
Gate Charge	350nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	60ns/200ns
Switching Energy	2.4mJ (on), 5.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	280ns
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IXGX120N60B

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