IXKK85N60C Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1800 mJ.This device has a continuous drain current (ID) of [85A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

IXKK85N60C Features

the avalanche energy rating (Eas) is 1800 mJ
a continuous drain current (ID) of 85A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns

IXKK85N60C Applications

There are a lot of IXYS
IXKK85N60C applications of single MOSFETs transistors.

• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit