IXTZ550N055T2

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Manufacturer part number:IXTZ550N055T2

Manufacturer:IXYS

Description:N Channel 55 V 550 A 1 mOhm TrenchT2 GigaMOS Power Mosfet - DE475

Case Package:SOT-23

Datasheet:IXTZ550N055T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DE475
Number of Pins	475
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	FRFET®, SupreMOS®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	1mOhm
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
JESD-30 Code	R-PDFP-F6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	600W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	550A Tc
Gate Charge (Qg) (Max) @ Vgs	595nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	550A
Pulsed Drain Current-Max (IDM)	1650A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free