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IXSH30N60CD1

IXSH30N60CD1

IXSH30N60CD1

IXYS

IGBT 600V 55A 200W TO247AD

SOT-23

IXSH30N60CD1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 55A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*30N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 30 ns
Transistor Application MOTOR CONTROL
Rise Time 30ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 90 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 55A
Reverse Recovery Time 50ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 70 ns
Test Condition 480V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Turn Off Time-Nom (toff) 290 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 30ns/90ns
Switching Energy 700μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 270ns
RoHS Status RoHS Compliant
Lead Free Lead Free

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