STGB12NB60KDT4

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Manufacturer part number:STGB12NB60KDT4

Manufacturer:STMicroelectronics

Description:STGB12NB60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB12NB60KDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	125W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
Current Rating	18A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB12
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	125W
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	14.5ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	30A
Reverse Recovery Time	80 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.2V
Max Breakdown Voltage	600V
Turn On Time	39.5 ns
Test Condition	480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 12A
Turn Off Time-Nom (toff)	461 ns
Gate Charge	54nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	25ns/96ns
Switching Energy	258μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead