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SIGC18T60NCX1SA3

  • SIGC18T60NCX1SA3
  • SIGC18T60NCX1SA3

SIGC18T60NCX1SA3

SIGC18T60NCX1SA3

Infineon Technologies

SIGC18T60NCX1SA3 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC18T60NCX1SA3 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 20A
Test Condition 300V, 20A, 13Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
IGBT Type NPT
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 21ns/110ns
RoHS Status ROHS3 Compliant
SIGC18T60NCX1SA3 Product Details

SIGC18T60NCX1SA3 Description


SIGC18T60NCX1SA3 is a 600v IGBT Chip in NPT technology. The transistor SIGC18T60NCX1SA3 can be applied in drives, and it is used for IGBT Modules due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor SIGC18T60NCX1SA3 is in the sawn-on foil package with ±20v Gate emitter voltage.

 


SIGC18T60NCX1SA3 Features


600V NPT technology 

100μm chip

positive temperature coefficient

easy paralleling



SIGC18T60NCX1SA3 Applications


Drives

Automotive 

Body electronics & lighting 

Industrial 

Building automation 

Personal electronics 

Gaming


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