SIGC42T60NCX7SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SIGC42T60NCX7SA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-55°C~150°C
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
50A
Test Condition
300V, 50A, 3.3Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 50A
IGBT Type
NPT
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
43ns/130ns
RoHS Status
ROHS3 Compliant
SIGC42T60NCX7SA1 Product Details
SIGC42T60NCX7SA1 Description
SIGC42T60NCX7SA1 belongs to the family of insulated gate bipolar transistors provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.