STN1HNK60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STN1HNK60 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
8.5Ohm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
400mA
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STN1H
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.3W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.3W
Case Connection
DRAIN
Turn On Delay Time
6.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
156pF @ 25V
Current - Continuous Drain (Id) @ 25°C
400mA Tc
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Rise Time
5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
25 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
500mA
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
0.4A
Drain to Source Breakdown Voltage
600V
Avalanche Energy Rating (Eas)
25 mJ
Max Junction Temperature (Tj)
150°C
Nominal Vgs
3 V
Height
1.82mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:7338 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.748925
$0.748925
10
$0.706533
$7.06533
100
$0.666541
$66.6541
500
$0.628812
$314.406
1000
$0.593219
$593.219
STN1HNK60 Product Details
STN1HNK60 Description
The STN1HNK60 is a 600V N-channel SuperMESH? MOSFET with extreme optimization of well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
STN1HNK60 Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Drain-source voltage:600v
Gate- source voltage: ±30v
STN1HNK60 Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
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