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STN1HNK60

STN1HNK60

STN1HNK60

STMicroelectronics

STN1HNK60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STN1HNK60 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 8.5Ohm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 400mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STN1H
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.3W
Case Connection DRAIN
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 25V
Current - Continuous Drain (Id) @ 25°C 400mA Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 500mA
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.4A
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 25 mJ
Max Junction Temperature (Tj) 150°C
Nominal Vgs 3 V
Height 1.82mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.748925 $0.748925
10 $0.706533 $7.06533
100 $0.666541 $66.6541
500 $0.628812 $314.406
1000 $0.593219 $593.219
STN1HNK60 Product Details

STN1HNK60 Description


The STN1HNK60 is a 600V N-channel SuperMESH? MOSFET with extreme optimization of well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.



STN1HNK60 Features


  • Extremely high dv/dt capability

  • 100% avalanche tested

  • Gate charge minimized

  • Drain-source voltage:600v

  • Gate- source voltage: ±30v



STN1HNK60 Applications


  • Rotary Switch

  • DIP Switch

  • Limit Switch

  • Reed Switch

  • Rocker Switch

  • Toggle Switch


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