IXTA1R6N100D2

new-10%

Manufacturer part number:IXTA1R6N100D2

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 1.6A D2PAK

Case Package:SOT-23

Datasheet:IXTA1R6N100D2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	100W Tc
Power Dissipation	100W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10 Ω @ 800mA, 0V
Input Capacitance (Ciss) (Max) @ Vds	645pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.6A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 5V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	1.6A
Gate to Source Voltage (Vgs)	20V
FET Feature	Depletion Mode
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free