SI1012CR-T1-GE3

new-10%

Manufacturer part number:SI1012CR-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount

Case Package:SOT-23

Datasheet:SI1012CR-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Number of Pins	3
Weight	2.012816mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	396mOhm
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	240mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	240mW
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	396m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	43pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	2nC @ 8V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	630mA
Threshold Voltage	400mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Max Junction Temperature (Tj)	150°C
Height	800μm
Length	1.68mm
Width	860μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free