SIHD7N60E-GE3 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 680pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7A amps.A device can conduct a maximum continuous current of [7A] according to its drain current.It is [48 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 26 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.The DS breakdown voltage should be maintained above 609V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

SIHD7N60E-GE3 Features

a continuous drain current (ID) of 7A
the turn-off delay time is 48 ns
a threshold voltage of 2V
a 600V drain to source voltage (Vdss)

SIHD7N60E-GE3 Applications

There are a lot of Vishay Siliconix
SIHD7N60E-GE3 applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies