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BSZ520N15NS3GATMA1

  • BSZ520N15NS3GATMA1
  • BSZ520N15NS3GATMA1

BSZ520N15NS3GATMA1

BSZ520N15NS3GATMA1

Infineon Technologies

BSZ520N15NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSZ520N15NS3GATMA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 8
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 57W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 57W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 35μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 75V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
Drain-source On Resistance-Max 0.052Ohm
Avalanche Energy Rating (Eas) 60 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.003440 $9.00344
10 $8.493811 $84.93811
100 $8.013030 $801.303
500 $7.559462 $3779.731
1000 $7.131568 $7131.568
BSZ520N15NS3GATMA1 Product Details

BSZ520N15NS3GATMA1 Description


The CoolMOS, OptiMOS, and Strong IRFET families are among the several MOSFET devices offered by Infineon. They provide best-in-class performance, resulting in increased efficiency, power density, and cost effectiveness. AEC-Q101 industry standards Automotive approved MOSFETs benefit designs needing high quality and additional protection features.



BSZ520N15NS3GATMA1 Features


  • Pin Count: 8

  • Maximum Drain Source Resistance: 52 mΩ

  • Channel Mode Enhancement

  • Maximum Gate Threshold Voltage: 4V

  • Minimum Gate Threshold Voltage: 2V

  • Maximum Power Dissipation: 57 W

  • Transistor Configuration Single

  • Maximum Gate Source Voltage: -20 V, +20 V

  • Length: 3.4mm



BSZ520N15NS3GATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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