IXTA26P10T

new-10%

Manufacturer part number:IXTA26P10T

Manufacturer:IXYS

Description:MOSFET P-CH 100V 26A TO-263

Case Package:SOT-23

Datasheet:IXTA26P10T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	TrenchP™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	150W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3820pF @ 25V
Current - Continuous Drain (Id) @ 25°C	26A Tc
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Continuous Drain Current (ID)	26A
JEDEC-95 Code	TO-263AA
Drain-source On Resistance-Max	0.09Ohm
Pulsed Drain Current-Max (IDM)	80A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	300 mJ
RoHS Status	ROHS3 Compliant