IXTA32N20T

new-10%

Manufacturer part number:IXTA32N20T

Manufacturer:IXYS

Description:MOSFET N-CH 200V 32A TO-263

Case Package:SOT-23

Datasheet:IXTA32N20T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263 (IXTA)
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	72MOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	200W Tc
Element Configuration	Single
Power Dissipation	200W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	72mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1760pF @ 25V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	18ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	32A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	1.76nF
Drain to Source Resistance	78mOhm
Rds On Max	72 mΩ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free