IXTH200N085T

new-10%

Manufacturer part number:IXTH200N085T

Manufacturer:IXYS

Description:MOSFET N-CH 85V 200A TO-247

Case Package:SOT-23

Datasheet:IXTH200N085T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	TrenchMV™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	480W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	480W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	200A Tc
Gate Charge (Qg) (Max) @ Vgs	152nC @ 10V
Rise Time	80ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	64 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	200A
JEDEC-95 Code	TO-247AD
Drain-source On Resistance-Max	0.005Ohm
Drain to Source Breakdown Voltage	85V
Pulsed Drain Current-Max (IDM)	540A
Avalanche Energy Rating (Eas)	1000 mJ
RoHS Status	RoHS Compliant