IXTH20N60

new-10%

Manufacturer part number:IXTH20N60

Manufacturer:IXYS

Description:MOSFET N-CH 600V 20A TO-247AD

Case Package:SOT-23

Datasheet:IXTH20N60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	MegaMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Resistance	350mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	20A
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Rise Time	43ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	20A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	80A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free