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IXTH26P20P

IXTH26P20P

IXTH26P20P

IXYS

MOSFET (Metal Oxide) P-Channel Tube 170m Ω @ 13A, 10V ±20V 2740pF @ 25V 56nC @ 10V 200V TO-247-3

SOT-23

IXTH26P20P Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PolarP™
Published 2007
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 26A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.17Ohm
Drain to Source Breakdown Voltage -200V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 1500 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $23.766222 $23.766222
10 $22.420965 $224.20965
100 $21.151853 $2115.1853
500 $19.954579 $9977.2895
1000 $18.825074 $18825.074
IXTH26P20P Product Details

IXTH26P20P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2740pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 26A.With a drain-source breakdown voltage of -200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 46 ns.Peak drain current for this device is 70A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTH26P20P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 70A.
a 200V drain to source voltage (Vdss)


IXTH26P20P Applications


There are a lot of IXYS
IXTH26P20P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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