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IXTH52N65X

IXTH52N65X

IXTH52N65X

IXYS

MOSFET N-CH 650V 52A TO-247

SOT-23

IXTH52N65X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 660W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 68m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Gate Charge (Qg) (Max) @ Vgs 113nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 52A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.003893 $0.003893
500 $0.002862 $1.431
1000 $0.002385 $2.385
2000 $0.002188 $4.376
5000 $0.002045 $10.225
10000 $0.001903 $19.03
15000 $0.001840 $27.6
50000 $0.001809 $90.45

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