IXTJ4N150

new-10%

Manufacturer part number:IXTJ4N150

Manufacturer:IXYS

Description:MOSFET N-CH 1500V 2.5A ISOTO-247

Case Package:SOT-23

Datasheet:IXTJ4N150 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	110W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1576pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.5A Tc
Gate Charge (Qg) (Max) @ Vgs	44.5nC @ 10V
Drain to Source Voltage (Vdss)	1500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	2.5A
Drain-source On Resistance-Max	6Ohm
Pulsed Drain Current-Max (IDM)	12A
DS Breakdown Voltage-Min	1500V
Avalanche Energy Rating (Eas)	350 mJ
RoHS Status	ROHS3 Compliant